Browsing Year-2018 by Title

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  • Actively controlled retention voltage of SRAMs 
    Mamgain, Ankush; Grover, Anuj (Advisor) (IIIT-Delhi, 2018-07)
    In advance technology nodes, static power consumption is a major component of total system power in systems that do not continuously operate at very high clock frequency. SRAMs not only contribute a major portion of SoC ...
  • Continuous time linear equalization based gigabit receiver for parallel interface 
    K, Tejaswini; Bahubalindruni, Pydi Ganga Mamba (Advisor); Mathur, Shiv Harit (Advisor) (IIIT-Delhi, 2018-05)
    Modern processors are capable of working at a very high frequency with the advent of technology scaling. However, memory limits the overall speed of operation. In order to take complete advantage of these modern ...
  • High voltage tolerant ESD protection circuit for plug and play devices 
    Kulshreshtha, Mranal; Bahubalindruni, Pydi Ganga Mamba (Advisor); Mathur, Shiv Harit (Advisor) (IIIT-Delhi, 2018-05)
    ESD (Electrostatic Discharge) protection circuits are widely used in the semiconductor industry generally as on-chip solution to protect main circuit or Design Under Test (DUT) against electrostatic discharge. This ...
  • A High-e cient current-mode PWM DC-DC buck converter using dynamic frequency scaling 
    Rehani, Ankit; Deb, Sujay (Advisor); Bahubalindruni, Pydi Ganga Mamba (Advisor); Odedara, Bhavin (Advisor) (IIIT-Delhi, 2018-06)
    Power Management Integrated Circuits (ICs), such as high-efficient switched mode dc- dc converters are essential building blocks in portable battery operated devices. This work presents design and implementation of a ...
  • Realizing and functionality using single tunnel field-effect transistor 
    Banerjee, Saptak; Saurabh, Sneh (Advisor) (IIIT-Delhi, 2018-07)
    In this thesis, a single Double-Gate Tunnel Field-Effect Transistor (DGTFET) is proposed to realize the AND functionality. Using two-dimensional device simulations, it is shown that a single DGTFET can realize logic ...
  • Reduced mutual coupling for through wall radars using orthogonally polarized antennas 
    Kaur, Guntaas; Ram, Shobha Sundar (Advisor) (IIIT-Delhi, 2017-12)
    There has been a growing interest in building through-the-wall radars (TWR) for law enforcement, security and biomedical applications for tracking humans in urban environments. Designing the antennas for such systems is a ...
  • Sub-1V CMOS bandgap reference for ultra-low power applications 
    DALAL, NEHA; Hashmi, Mohammad S. (Advisor); Rana, Vikas (Advisor) (IIIT-Delhi, 2018-07-13)
    BCD silicon process technology is invented by ST which plays a pivotal role in today’s industry. BCD is outcome of merging three different process technologies. The Digital, Analog and Power/High voltage elements are brought ...
  • A successive approximation register based digital delay locked loop for clock and data recovery circuits 
    Mittal, Priyanka; Bahubalindruni, Pydi Ganga Mamba (Advisor); Odedara, Bhavin (Advisor) (2018-07)
    The delay locked loop (DLL) is widely used in the electronics industry for implementing clock and data recovery circuits (CDR) in high-speed IOs. DLL contains first order closed-loop architecture, aligns the output clock ...

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