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dc.contributor.authorGupta, Sachin-
dc.contributor.authorGhosh, Ram Krishna (Advisor)-
dc.date.accessioned2026-04-06T12:57:11Z-
dc.date.available2026-04-06T12:57:11Z-
dc.date.issued2024-11-27-
dc.identifier.urihttp://repository.iiitd.edu.in/xmlui/handle/123456789/1844-
dc.description.abstractThis work establishes a strong foundation in understanding the key physics concepts behind cryogenic transport in Gate-All-Around (GAA) nanowire MOSFETs. The findings contribute to a deeper understanding of device behavior of GAA nanowire MOSFETs, paving the way for potential real-world applications and further advancements.en_US
dc.language.isoen_USen_US
dc.publisherIIIT-Delhien_US
dc.subjectCryogenic transporten_US
dc.subjectGAA nanowire MOSFETsen_US
dc.titleCryogenic transport in GAA nanowire MOSFETs.en_US
dc.typeOtheren_US
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