Cryogenic transport in GAA nanowire MOSFETs.

dc.contributor.author	Gupta, Sachin
dc.contributor.author	Ghosh, Ram Krishna (Advisor)
dc.date.accessioned	2026-04-06T12:57:11Z
dc.date.available	2026-04-06T12:57:11Z
dc.date.issued	2024-11-27
dc.identifier.uri	http://repository.iiitd.edu.in/xmlui/handle/123456789/1844
dc.description.abstract	This work establishes a strong foundation in understanding the key physics concepts behind cryogenic transport in Gate-All-Around (GAA) nanowire MOSFETs. The findings contribute to a deeper understanding of device behavior of GAA nanowire MOSFETs, paving the way for potential real-world applications and further advancements.	en_US
dc.language.iso	en_US	en_US
dc.publisher	IIIT-Delhi	en_US
dc.subject	Cryogenic transport	en_US
dc.subject	GAA nanowire MOSFETs	en_US
dc.title	Cryogenic transport in GAA nanowire MOSFETs.	en_US
dc.type	Other	en_US