IIIT-Delhi Institutional Repository

Design of GaN HEMT broadband power amplifiers

Show simple item record

dc.contributor.author Banerjee, Deepayan
dc.contributor.author Hashmi, Mohammad S. (Advisor)
dc.date.accessioned 2017-11-10T10:00:17Z
dc.date.available 2017-11-10T10:00:17Z
dc.date.issued 2017-03
dc.identifier.uri http://repository.iiitd.edu.in/xmlui/handle/123456789/540
dc.description.abstract Power Amplifiers are undoubtedly one of the most important blocks in any transmitter system. Long range communication requires a massive boost-up of the power to be delivered, before it can be launched in the channel. This makes Power Amplifier (PA) design to be a challenging task. Recently, a lot of work regarding Gallium Nitride (GaN) PAs is going on around the globe and have drawn the researcher’s interests. This Master’s thesis presents a simulation based design of a 10W broadband PA, operating at the WiFi frequency of 2.4GHz. The amplifier was designed using the large signal model (CGH400010F) from Cree Incorp. Advanced Design Systems (ADS) from Keysight Technologies has been used for simulations. The designed amplifier shows a Power Added Efficiency (PAE) of 70% and delivers 38dBm (Pdel) of power at the design frequency. The gain is measured to be above 9.5dB over the operating band. en_US
dc.language.iso en_US en_US
dc.subject Power amplifiers en_US
dc.subject Gallium nitride en_US
dc.title Design of GaN HEMT broadband power amplifiers en_US
dc.type Thesis en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search Repository


Advanced Search

Browse

My Account