IIIT-Delhi Institutional Repository

Browsing Electronics and Communication Engineering by Title

Browsing Electronics and Communication Engineering by Title

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  • Ansari, Naushad; Gupta, Anubha (Advisor) (IIIT-Delhi, 2017-12)
    Transform learning (TL) is currently an active research area. It has been explored in several applications including image/video denoising, compressed sensing (CS) of magnetic resonance images (MRI), etc. and is observed ...
  • Chauhan, Nikhil; Shah, Rajiv Ratn (Advisor); Kumaraguru, Ponnurangam (Advisor); Singh, Sehaj (IIIT-Delhi, 2021)
    FEST@IIITD is a part of the Umbrella OSA (Online Student A airs) app and serves the purpose of bringing together and managing all the cultural events happening at our campus. It provides the overview for the events, along ...
  • Shashwat; Hashmi, Mohammad S. (Advisor) (2016-09-12)
    To serve large geographical area, there is need to drive antenna with high power. It necessitates the requirement of high power amplifier (PA) for delivering large RF output power. Alongside power added efficiency (PAE) ...
  • Batra, Shipra; Hashmi, Mohammad S. (Advisor) (2017)
    Material properties of wide-bandgap semiconductors are excellent candidates to build highly-efficient and highly-linear power amplifiers required to support cellular communication. AlGaN/GaN HEMTs are considered the most ...
  • Sinha, Rohan; Hashmi, Mohammad S. (Advisor) (2014-07-11)
    Today, in every electronic system, some information must be stored even when the system is not powered. Solid state non-volatile memories are used for storing those information which should not be lost even when the power ...
  • Kaur, Ramandeep; Fell, Alexander (Advisor) (2015-12-17)
    System on Chips (SoC) targeted for high performance network applications such as Internet routers, require low latency memories combined with large storage capacities to maintain high throughputs and fast packet forwarding ...
  • Sharma, Pulkit; Hashmi, Mohammad S. (Advisor) (2016-09-12)
    On chip process parameter variations have become a major challenge to meet the high density demands and the advancement in CMOS technologies. Variations in threshold voltage of transistors due to random dopant fluctuations ...

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